These features of 222G mutants may contribute to exacerbation of disease.”
“Purpose: Pain from osteoarthritis (OA) is generally classified as nociceptive (inflammatory). Animal models of knee OA have shown that sensory nerve fibers innervating the knee are significantly damaged with destruction of subchondral bone junction, and induce neuropathic pain (NP). Our objective was to examine NP in the knees of OA patients using painDETECT (an NP questionnaire) and to evaluate the relationship between

NP, pain intensity, and stage of OA. Materials and Methods: Ninety-two knee OA patients were evaluated in this study. Pain scores using Visual Analogue Scales (VAS), Western Ontario and McMaster Universities Osteoarthritis Index (WOMAC), painDETECT, duration of symptoms, severity of OA using the Kellgren-Lawrence (KL) system, and amount of joint fluid were evaluated and compared

using a Spearman’s see more correlation coefficient by rank test. Results: Our study identified at least 5.4% of our knee OA patients as likely to have NP and 15.2% as possibly having NP. The painDETECT score was significantly correlated with the VAS and WOMAC pain severity. Compared with the painDETECT score, there was a tendency for positive correlation with the KL grade, and tendency for negative correlation with the existence and amount of joint fluid, but these correlations ZD1839 ic50 were not significant. Conclusion: PainDETECT scores classified 5.4% of pain from knee OA as NP. NP tended to be seen in patients with less joint fluid and

increased KL grade, both of which corresponded to late stages of OA. It is important to consider the existence of NP in the treatment of knee OA pain.”
“We present a detailed study on incomplete ionization (i.i.) of aluminum acceptors in highly aluminum-doped p(+) silicon formed by alloying from screen-printed Al pastes. We apply electrochemical capacitance-voltage (ECV) and secondary ion mass spectrometry (SIMS) measurements to detect the Al doping profiles and discuss key aspects AZD7762 purchase necessary for a precise determination of the profiles. The excellent accordance of ECV- and SIMS-measured acceptor profile curves allows for the accurate investigation of Al acceptor ionization. We review the physics of i.i. and verify a simple quantitative model for incomplete Al acceptor ionization by comparing measured and calculated sheet-resistances of Al-doped p(+) Si surfaces. We thus show that the electrically active Al doping concentration is nearly two times lower than the total Al concentration, so that i.i. of Al acceptors has to be considered for the correct description of highly Al-doped p(+) Si regions. Therefore, our results allow for an improved quantitative analysis of n- and p-type silicon solar cells with Al-alloyed p(+) rear emitter or back surface field, respectively. (C) 2013 AIP Publishing LLC.